Amorphous-silicon cell reliability testing

The work on reliability testing of solar cells is discussed. Results are given on initial temperature and humidity tests of amorphous silicon devices. Calibration and measurement procedures for amorphous and crystalline cells are given. Temperature stress levels are diagrammed

Accelerated stress testing of thin film solar cells: Development of test methods and preliminary results

If thin film cells are to be considered a viable option for terrestrial power generation their reliability attributes will need to be explored and confidence in their stability obtained through accelerated testing. Development of a thin film accelerated test program will be more difficult than was the case for crystalline cells because of the monolithic construction nature of the cells. Specially constructed test samples will need to be fabricated, requiring committment to the concept of accelerated testing by the manufacturers. A new test schedule appropriate to thin film cells will need to be developed which will be different from that used in connection with crystalline cells. Preliminary work has been started to seek thin film schedule variations to two of the simplest tests: unbiased temperature and unbiased temperature humidity. Still to be examined are tests which involve the passage of current during temperature and/or humidity stress, either by biasing in the forward (or reverse) directions or by the application of light during stress. Investigation of these current (voltage) accelerated tests will involve development of methods of reliably contacting the thin conductive films during stress

Accelerated degradation of silicon metallization systems

Clemson University has been engaged for the past five years in a program to determine the reliability attributes of solar cells by means of accelerated test procedures. The cells are electrically measured and visually inspected and then subjected for a period of time to stress in excess of that normally encountered in use, and then they are reinspected. Changes are noted and the process repeated. This testing has thus far involved 23 different unencapsulated cell types from 12 different manufacturers, and 10 different encapsulated cell types from 9 different manufacturers. Reliability attributes of metallization systems can be classified as major or minor, depending on the severity of the effects observed. As a result of the accelerated testing conducted under the Clemson program, major effects have been observed related to contact resistance and to mechanical adherence and solderability. This paper does not attempt a generalized survey of accelerated test results, but rather concentrates on one particular attribute of metallization that has been observed to cause electrical degradation - increased contact resistance due to Schottky barrier formation. In this example basic semiconductor theory was able to provide an understanding of the electrical effects observed during accelerated stress testing

Investigation of reliability attributes and accelerated stress factors on terrestrial solar cells

Three tasks were undertaken to investigate reliability attributes of terrestrial solar cells: (1) a study of the electrical behavior of cells in the second (reverse) quadrant; (2) the accelerated stress testing of three new state-of-the-art cells; and (3) the continued bias-temperature testing of four block 2 type silicon cells at 78 C and 135 C. Electrical characteristics measured in the second quadrant were determined to be a function of the cell's thermal behavior with breakdown depending on the initiation of localized heating. This implied that high breakdown cells may be more fault tolerant when forced to operate in the second quadrant, a result contrary to conventional thinking. The accelerated stress tests used in the first (power) quadrant were bias-temperature, bias-temperature-humidity, temperature-humidity, thermal shock, and thermal cycle. The new type cells measured included an EFG cell, a polycrystalline cell, and a Czochralski cell. Significant differences in the response to the various tests were observed between cell types. A microprocessed controlled, short interval solar cell tester was designed and construction initiated on a prototype

Accelerated stress factors and failure/degradation mechanisms in terrestrial solar cells

Plans for the development of amorphous cell accelerated test measurement instrumentation are outlined. Diagrams for an 11-lamp ELH solar simulator and ac light source instrumentation are given. Examples of ac and dc analysis graphs are also provided

Investigation of reliability attributes and accelerated stress factors on terrestrial solar cells

The accelerated stress test results obtained on all terrestrial solar cells since the inception of the program are summarized. Tested cells were grouped according to the method used to form the conductive metallization layer: solder dipped, vacuum deposited, screen printed, and copper plated. Although metallization systems within each group were quite similar, they differed in numerous details according to the procedures employed by each manufacturer. Test results were summarized for all cells according to both electrical degradation and catastrophic mechanical changes. These results indicated a variability within each metallization category which was dependent on the manufacturer. Only one manufacturer was represented in the copper plated category and, although these showed no signs of detrimental copper diffusion during high temperature testing, their metallization was removed easily during high humidity pressure cooker testing. Preliminary testing of encapsulated cells showed no major differences between encapsulated and unencapsulated cells when subjected to accelerated testing

Investigation of accelerated stress factors and failure/degradation mechanisms in terrestrial solar cells

Research on the reliability of terrestrial solar cells was performed to identify failure/degradation modes affecting solar cells and to relate these to basic physical, chemical, and metallurgical phenomena. Particular concerns addressed were the reliability attributes of individual single crystalline, polycrystalline, and amorphous thin film silicon cells. Results of subjecting different types of crystalline cells to the Clemson accelerated test schedule are given. Preliminary step stress results on one type of thin film amorphous silicon (a:Si) cell indicated that extraneous degradation modes were introduced above 140 C. Also described is development of measurement procedures which are applicable to the reliability testing of a:Si solar cells as well as an approach to achieving the necessary repeatability of fabricating a simulated a:Si reference cell from crystalline silicon photodiodes

Investigation of reliability attributes and accelerated stress factors on terrestrial solar cells

Major effort during this reporting period was devoted to two tasks: improvement of the electrical measurement instrumentation through the design and construction of a microcomputer controlled short interval tester, and better understanding of second quadrant behavior by developing a mathematical model relating cell temperature to electrical characteristics. In addition, some preliminary work is reported on an investigation into color changes observed after stressing

Investigation of reliability attributes and accelerated stress factors on terrestrial solar cells

The results of accelerated stress testing of four different types of silicon terrestrial solar cells are discussed. The accelerated stress tests used included bias-temperature tests, bias-temperature-humidity tests, thermal cycle and thermal shock tests, and power cycle tests. Characterization of the cells was performed before stress testing and at periodic down-times, using electrical measurement, visual inspection, and metal adherence pull tests. Electrical parameters measured included short-circuit current, open circuit voltage, and output power, voltage, and current at the maximum power point. Incorporated in the report are the distributions of the prestress electrical data for all cell types. Data were also obtained on cell series and shunt resistance